Annealed Ba1-xMg2Al6Si9O30:xEu Phosphors: Super-Broad
Trap Level Distribution And Optical Storage Property
Volume 3 - Issue 4
Zhang X1,2, Deng MX1,2, Wang CY1,2, Zheng ZH1,3, Liu Q1,2*, Zhou ZZ1 and Xu XK1
- 1The State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy
of Sciences, China
- 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China
- 3College of Materials Science and Engineering, Fuzhou University, China
Received: February 11, 2021; Published: February 23, 2021
*Corresponding author: Liu Q, The State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
DOI: 10.32474/MAMS.2021.03.000171
Abstract
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Abstract
Currently, lots of research work have been conducted to exploit inorganic optical storage materials (OSMs). Despite those impressing discoveries of new OSMs, the inducing of defects or traps and the interaction between light-emitting center and charge carrier recombination center is still under debate. Herein, through sol-gel methods, a novel Ba1-xMg2Al6Si9O30: xEu (BMASO: xEu) phosphor of OSMs were successfully synthesized. Fine crystallization of hexagonal phase was proved by XRD Rietveld refinement. From the thermoluminescence (TL) results, a super-broad distribution of trap level from 323-673 K was found for the sample BMASO:0.02Eu annealed in a reductive atmosphere, with a considerable TL intensity even in a high temperature region over 673 K. Because of the annealing in reductive atmosphere and part of Eu ions replacement for Ba or even Mg ions, many lattice defects have been caused, resulting in a large trap concentration and continuous trap distribution, which is very critical for OSMs. Finally, the potential in OSMs application was tested, showing the feasibility of photo stimulated luminescence (PSL) under laser irradiation of 980 nm and thermally stimulated luminescence (TSL) on a heating stage of 573 K, owing to the good stability and durability of the captured charge carriers in traps over 60 days in the annealed BMASO:0.02 Eu phosphor.
Keywords: Optical storage materials (OSMs); Trap level; Reductive annealing; Thermoluminescence; Ba1-xMg2Al6Si9O30: xEu
Abbreviations:
BMASO:xEu: Ba1-xMg2Al6Si9O30:xEu; OSMs: Optical Storage Materials; TL: Thermo Luminescence; PSL: Photo Stimulated Luminescence; TSL: Thermally Stimulated Luminescence; PersL: Persistent Luminescence; RA: Reductive Atmosphere
Abstract|
Introduction|
Experimental Work"|
Characterization and Measurements|
Results and Discussion|
Photoluminescence Properties|
TL Property and Broad Trap Distribution|
Optical Storage and Durability|
Conclusion|
Acknowledgements|
References|