Towards Next Generation Of Boron Ion Implantation Devices Volume 4 - Issue 3

Janis Blahins* and Arnolds Ubelis

• National Science Platform Platform FOTONIKA-LV, The Institute of Atomic Physics and Spectroscopy at the University of Latvia, Europe

Received:August 20, 2021;   Published: August 27, 2021

*Corresponding author:Janis Blahins, National Science Platform Platform FOTONIKA-LV, The Institute of Atomic Physics and Spectroscopy at the University of Latvia, Europe

DOI: 10.32474/MAMS.2021.04.000192

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Abstract

There is an overall need for small size user friendly implanters. The challenge is to find technology that allows to use pure Boron ion sources instead of its chemical compounds that create difficulties in the beam forming process and in most cases are poisonous. We offer game changing approach to use hollow cathode discharge combined with RF-ICP plasma to produce Boron ions and to form beam of Boron ions for implantation in crystals accordingly.

Keywords: Ion Implantation; Boron Ion Source; “State-Of-The-Art” Boron Ion Implantation Equipment; Search In Breakthrough Towards More Handy Implanting Apparatus

Abstract| Introduction| State-of-The-Art Of Pure Boron Ion Beam Forming Approaches| Discussion/Conclusions| Acknowledgments| References|